Silicon Power 8GB-32GB Enterprise Grade ECC DDR4 3200MHz (PC4-25600) CL22 1.2V SODIMM

[Product Features]
The industrial SFE series organized as a one rank 1024Mx72, high-speed memory array or two ranks 2048Mx72, high-speed memory array. The module uses nine 512Mx8(4GB), 1Gx8(8GB), eighteen 1Gx8 (16GB) DDR4 SDRAMs in BGA packages. This DIMM is manufactured using raw cards developed for broad industry use as reference designs. The use of these common design files minimizes electrical variation between suppliers. DDR4 SDRAM SODIMM provide a high-performance, flexible 8-byte interface in a space-saving footprint. 

The DIMM is intended for use in applications operating of 1200MHz or 1333MHz clock speeds and achieves high-speed data transfer rates of 3200Mbps. Prior to any access operation, the device CAS latency and burst/length/operation type must be programmed into the DIMM by address inputs A0-A15(1Gx8) and I/O inputs BA0, BA1, BG0, BG1 using the mode register set cycle. The DIMM uses serial presence-detect implemented via a serial EEPROM using a standard IIC protocol.

[Product Specifications]
• 260pin, Small Outline Dual In-line Memory Module (SODIMM) 
• Single or Dual rank 
• Module Density & Configuration:
  8GB (1G x 72) 1Gx8 1Rank
  16GB (2G x 72) 2Gx8 1Rank
  32GB (2G x 72) 2Gx8 2Ranks
• VDD = VDDQ = 1.2V ±0.06V 
• VDDSPD = 2.2V 
• VPP = 2.5V (DRAM Activating Power Supply:) 
• 16 internal banks; 4 groups of 4 banks each 
• Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals 
• Low-power auto self refresh (LPASR) 
• Data bus inversion (DBI) for data bus
• Fixed burst chop (BC) of 4 and burst length (BL) of 8 via the mode register set (MRS) 
• Fly-by topology 
• Terminated control, command, and address bus 
• This product is in compliance with the RoHS directive 
• Integrated serial presence-detect (SPD) EEPROM 
• Gold edge contacts